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Emergency Preparedness and Disaster Response: There’s An App for That
- Daniel J. Bachmann, Nathan K. Jamison, Andrew Martin, Jose Delgado, Nicholas E. Kman
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- Journal:
- Prehospital and Disaster Medicine / Volume 30 / Issue 5 / October 2015
- Published online by Cambridge University Press:
- 15 September 2015, pp. 486-490
- Print publication:
- October 2015
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Introduction
Smartphone applications (or apps) are becoming increasingly popular with emergency responders and health care providers, as well as the public as a whole. There are thousands of medical apps available for Smartphones and tablet computers, with more added each day. These include apps to view textbooks, guidelines, medication databases, medical calculators, and radiology images.
Hypothesis/ProblemWith an ever expanding catalog of apps that relate to disaster medicine, it is hard for both the lay public and responders to know where to turn for effective Smartphone apps. A systematic review of these apps was conducted.
MethodsA search of the Apple iTunes store (Version 12; Apple Inc.; Cupertino, California USA) was performed using the following terms obtained from the PubMed Medical Subject Headings Database: Emergency Preparedness, Emergency Responders, Disaster, Disaster Planning, Disaster Medicine, Bioterrorism, Chemical Terrorism, Hazardous Materials (HazMat), and the Federal Emergency Management Agency (FEMA). After excluding any unrelated apps, a working list of apps was formed and categorized based on topics. Apps were grouped based on applicability to responders, the lay public, or regional preparedness, and were then ranked based on iTunes user reviews, value, relevance to audience, and user interface.
ResultsThis search revealed 683 applications and was narrowed to 219 based on relevance to the field. After grouping the apps as described above, and subsequently ranking them, the highest quality apps were determined from each group. The Community Emergency Response Teams and FEMA had the best apps for National Disaster Medical System responders. The Centers for Disease Control and Prevention (CDC) had high-quality apps for emergency responders in a variety of fields. The National Library of Medicine’s Wireless Information System for Emergency Responders (WISER) app was an excellent app for HazMat responders. The American Red Cross had the most useful apps for natural disasters. Numerous valuable apps for public use, including alert apps, educational apps, and a well-made regional app, were also identified.
ConclusionSmartphone applications are fast becoming essential to emergency responders and the lay public. Many high-quality apps existing in various price ranges and serving different populations were identified. This field is changing rapidly and it deserves continued analysis as more apps are developed.
,Bachmann DJ ,Jamison NK ,Martin A ,Delgado J .Kman NE Emergency Preparedness and Disaster Response: There’s An App for That . Prehosp Disaster Med.2015 ;30 (5 ):1 –5 .
Contributors
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- By Rony A. Adam, Gloria Bachmann, Nichole M. Barker, Randall B. Barnes, John Bennett, Inbar Ben-Shachar, Jonathan S. Berek, Sarah L. Berga, Monica W. Best, Eric J. Bieber, Frank M. Biro, Shan Biscette, Anita K. Blanchard, Candace Brown, Ronald T. Burkman, Joseph Buscema, John E. Buster, Michael Byas-Smith, Sandra Ann Carson, Judy C. Chang, Annie N. Y. Cheung, Mindy S. Christianson, Karishma Circelli, Daniel L. Clarke-Pearson, Larry J. Copeland, Bryan D. Cowan, Navneet Dhillon, Michael P. Diamond, Conception Diaz-Arrastia, Nicole M. Donnellan, Michael L. Eisenberg, Eric Eisenhauer, Sebastian Faro, J. Stuart Ferriss, Lisa C. Flowers, Susan J. Freeman, Leda Gattoc, Claudine Marie Gayle, Timothy M. Geiger, Jennifer S. Gell, Alan N. Gordon, Victoria L. Green, Jon K. Hathaway, Enrique Hernandez, S. Paige Hertweck, Randall S. Hines, Ira R. Horowitz, Fred M. Howard, William W. Hurd, Fidan Israfilbayli, Denise J. Jamieson, Carolyn R. Jaslow, Erika B. Johnston-MacAnanny, Rohna M. Kearney, Namita Khanna, Caroline C. King, Jeremy A. King, Ira J. Kodner, Tamara Kolev, Athena P. Kourtis, S. Robert Kovac, Ertug Kovanci, William H. Kutteh, Eduardo Lara-Torre, Pallavi Latthe, Herschel W. Lawson, Ronald L. Levine, Frank W. Ling, Larry I. Lipshultz, Steven D. McCarus, Robert McLellan, Shruti Malik, Suketu M. Mansuria, Mohamed K. Mehasseb, Pamela J. Murray, Saloney Nazeer, Farr R. Nezhat, Hextan Y. S. Ngan, Gina M. Northington, Peggy A. Norton, Ruth M. O'Regan, Kristiina Parviainen, Resad P. Pasic, Tanja Pejovic, K. Ulrich Petry, Nancy A. Phillips, Ashish Pradhan, Elizabeth E. Puscheck, Suneetha Rachaneni, Devon M. Ramaeker, David B. Redwine, Robert L. Reid, Carla P. Roberts, Walter Romano, Peter G. Rose, Robert L. Rosenfield, Shon P. Rowan, Mack T. Ruffin, Janice M. Rymer, Evis Sala, Ritu Salani, Joseph S. Sanfilippo, Mahmood I. Shafi, Roger P. Smith, Meredith L. Snook, Thomas E. Snyder, Mary D. Stephenson, Thomas G. Stovall, Richard L. Sweet, Philip M. Toozs-Hobson, Togas Tulandi, Elizabeth R. Unger, Denise S. Uyar, Marion S. Verp, Rahi Victory, Tamara J. Vokes, Michelle J. Washington, Katharine O'Connell White, Paul E. Wise, Frank M. Wittmaack, Miya P. Yamamoto, Christine Yu, Howard A. Zacur
- Edited by Eric J. Bieber, Joseph S. Sanfilippo, University of Pittsburgh, Ira R. Horowitz, Emory University, Atlanta, Mahmood I. Shafi
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- Clinical Gynecology
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- 05 April 2015
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- 23 April 2015, pp viii-xiv
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Island Coalescence Induced Substructure Within GaP Epitaxial Layers Grown on (001), (111), (110) and (113) Si
- V. Narayanan, S. Mahajan, K. J. Bachmann, V. Woods, N. Dietz
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- Journal:
- MRS Online Proceedings Library Archive / Volume 618 / 2000
- Published online by Cambridge University Press:
- 10 February 2011, 53
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- 2000
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GaP islands grown on selected surfaces of Si and their coalescence behavior have been investigated by transmission electron microscopy. These layers were grown by chemical beam epitaxy. A number of significant observations emerge from this study. First, planar defect formation has been shown to be related to stacking errors on the smaller P-terminated {111} facets of GaP islands. Amongst the four orientations, (111) epilayers have a higher density of stacking faults and first order twins because of more P-terminated {111} facets per island. Second, multiple twinning on exposed {111} facets can produce tilt boundaries and irregular growths when islands coalesce. Third, inversion domain boundaries lying on {110} planes have been shown to form during GaP island coalescence across monatomic steps on (001) Si. Image simulations have been performed to show that these boundaries can be seen in high resolution lattice images and the observed contrast is attributed to the presence of wrong Ga-Ga and P-P bonds at the inversion boundary.
Effect of Fast Electron Irradiation on Electrical and Optical Properties of CdGeAs2 and ZnGep2
- I. Zwieback, J. Maffetone, D. Perlov, J. Harper, W. Ruderman, K. Bachmann, N. Dietz
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- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 409
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- 1999
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We report on the effects of fast electron irradiation on the optical absorption (α) of CdGeAs2and ZnGeP2 and on the electrical properties of CdGeAs2. In p-CdGeAs2 irradiation led to the reduction in α and an increase in the electrical resistivity. The lowest values of α (about 0.1 cm' at 5µm<λ<10µm) were obtained on irradiated crystals of p-type with the highest degree of compensation. Further accumulation of the electron dose caused conversion to n-type and deterioration of the optical transmission. In ZnGeP2 irradiation caused a decrease in a at λ>0.85 λm and increase in α at λ<0.85 μm. At λ=2.05 μm, α for the o-ray could be reduced to less than 0.08 cm−1. At higher doses, saturation in α was observed. The effects of irradiation are discussed in connection with possible mechanisms of optical absorption in CdGeAs2 and ZnGeP2.
Native Defect Characterization in ZnGeP2
- A. Hoffmann, H. Born, A. Näser, W. Gehlhoff, J. Maffetone, D. Perlov, W. Ruderman, I. Zwieback, N. Dietz, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 373
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- 1999
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Electron paramagnetic resonance (EPR) as well as time-resolved and time-integrated photoluminescence (PL) are used to characterize the defect centers in ZnGeP2 bulk crystals. The samples, as-grown, electron-irradiated and annealed, reveal a strong intensity dependence of the VZn-correlated EPR-transitions. Photo-EPR experiments show that this intensity behavior is mainly caused by a recharging of the VZn centers owing to the preparation induced shift of the Fermi-level. The luminescence spectra show a broad infrared emission with peak position at 1.23 eV that exhibits features of classical donor-acceptor recombination. The hyperbolic decay characteristics, investigated in energy range from 1.2 eV up to 1.5eV, suggest that this broad emission band is related to one energetic recombination center. This recombination is interpreted to be between donor-acceptor states related to residual disorder on the cation sublattice that is retained in metastable equilibrium during the formation of the chalcopyrite structure. The emission decay behavior in the energy range from 1.2 eV up to 1.6 eV is characterized by two hyperbolic time constants, and explained as the super-composition of the decays from the broad emission center peaked at 1.2 eV and an additional donor-acceptor recombination centers at 1.4 eV.
Growth of NLO Chalcopyrite Materials by Omvpe
- M. L. Timmons, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 484 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 507
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- 1997
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This paper describes the application of organometallic vapor phase epitaxy to the growth of II-1V-V2 chalcopyrite materials that have high figures of merit for nonlinear optical (NLO) applications. ZnGeAs2, although not a particularly interesting NLO material, is used as a model for the growth of ZnGeP2, which is. Both compounds, as well as others, have been successfully grown by vapor phase on III-V substrates that provide a close lattice match. Doping studies using Group II and VI elements have been undertaken to control the p-type conductivity found in both compounds. Except for the possible case of indium, the results of these experiments are less than encouraging. Minority-carrier lifetimes of 150 ns have been measured in ZnGeAs2.
The results of this work are used to make projections about the growth of CdGeAs2. CdGeAs2 is promising for the next generation of NLO mid-infrared materials if an absorption band that occurs at about 5 μm can be reduced. The growth projections suggest that this compound will be difficult to grow epitaxially and has no III-V substrate that provides a close lattice match. Mixing CdGeAs2 with other II-IV-V2 materials may offer solutions to the substrate problem. The defect properties of CdGeAs2 have not, to our knowledge, been studied.
Real-time Characterization of the Optical Properties of an ultra-thin Surface Reaction Layer during Growth
- N. Dietz, N. Sukidib, C. Harrisb, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 441 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 39
- Print publication:
- 1996
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The average optical properties of an ultra-thin surface reaction layer (SRL) during growth by pulsed chemical beam epitaxy (PCBE) can be quantitatively accessed by p-polarized reflectance spectroscopy (PRS), as demonstrated on the example of heteroepitaxial GaP growth. Under PCBE growth conditions, the surface of the substrate is exposed to pulsed ballistic beams of tertiarybutyl phosphine [TBP, (C4H9)PH2] and triethylgallium [TEG, Ga(C2H5)3]. The pulsed precursor supply causes a period in composition and thickness modulated SRL, monitored as a fine structure that is superimposed on interference oscillations, resulting from back reflection at the substratelayer interface with increasing layer thickness. The amplitude of this fine structure undergoes a period amplitude modulation and exhibits turning points at which the response to the first precursor pulse changes sign. The turning points can be characterized by the expression R4(Φmax)=R4(Φmin), which describes the maximal and minimal values of the temporally modulated phase factor in the SRL, using a four layer stack description. The positions of these turning points are not affected by the thickness of the SRL, which allows the computation of the average complex dielectric function of the SRL independent of its thickness. In the next step, the average thickness of the SRL can be extracted from the amplitude of the observed fine structure.
Multilevel Approaches Toward Monitoring and Control of Semiconductor Epitaxy
- D. E. Aspnes, N. Dietz, U. Rossow, K. J. Bachmann
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- MRS Online Proceedings Library Archive / Volume 448 / 1996
- Published online by Cambridge University Press:
- 03 September 2012, 451
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- 1996
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Various optical techniques have been developed over the last few years to allow real-time analysis of regions of importance for semiconductor epitaxy, in particular the unreacted and reacted parts of the surface reaction layer (SRL) and the near-surface region of the sample. When coupled with emerging microscopic methods of calculating optical properties, these approaches will allow several levels of control beyond that which has been currently demonstrated.
Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence
- N. Dietz, W. Busse, H. E. Gumlich, W. Ruderman, I. Tsveybak, G. Wood, K. J. Bachmann
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- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 333
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- 1996
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Steady state and time-resolved photoluminescence (PL) investigations on ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) are reported. The luminescence spectra reveal a broad infrared emission with peak position at 1.2 eV that exhibits features of classical donor-acceptor recombination. The hyperbolic decay characteristic over a wide energy range, investigated from 1.2 eV up to 1.5eV, suggest that this broad emission band is related to one energetic recombination center. Higher energetic luminescence structures at 1.6eV and 1.7eV were revealed after annealing of ZnGeP2 crystals in vacuum for a longer period of time. The emission decay behavior in this energy range is characterized by two hyperbolic time constants, viewed as the supercomposition of the decay from the broad emission center peaked at 1.2eV and additional donor-acceptor recombination emissions at 1.6eV and 1.7eV, respectively. ZnGeP2 crystals grown under Ge-deficient conditions by HPVT show an additional emission structure at 1.8 eV with sharp emission fine structures at 1.778 eV related to the presence of additional donor states.
GaxIn1-xP/GaP Heterostructures on Si(001) Substrate
- N. Sukidi, N. Dietz, U. Rossow, K. J. Bachmann
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- MRS Online Proceedings Library Archive / Volume 441 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 81
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- 1996
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In this contribution we report on the real-time monitoring of low temperature growth of epitaxial GaxIn1-xP/GaP heterostructures on Si(100) by pulse chemical beam epitaxy, using tertiary butylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) as source materials. Both step-graded and continuously graded heterostructures have been investigated. The composition of the GaxIn1-xP epilayers has been analyzed by various techniques including X-ray diffraction, Rutherford backscattering, Auger, and Raman spectroscopy. Good correlation has been found between X-ray diffraction, RBS, and Vegard's law compositional analysis. We used Ppolarized Reflectance Spectroscopy (PRS) and Laser Light Scattering (LLS) to monitor the growth rate and surface morphology during growth. The information gained by these techniques has been utilized in the improvement of the surface preconditioning as well as to optimize the initial heteroepitaxial nucleation and overgrowth process. We studied the optical response to the compositional changes in the surface reaction layer (SRL) during the exposure of the surface to either sequential or synchronous pulses of TEG and TMI. The cross sectional TEM analysis indicates that the synchronous exposure results in an abrupt GaxIn1-xP/GaP interface while the sequential exposure does not which may suggest a compositionally graded interlayer formation. For heteroepitaxial GaxIn1-xP films on Si, a buffer layer of GaP is found to be necessary for optimum uniformity of the GaxIn1-xP layer. The selective growth of GaxIn1-xP on Si(001) is accessed.
Melt Growth of ZnGeP2: Homogeneity Range and Thermochemical Properties
- S. Fiechter, R. H. Castleberry, M. Angelov, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 315
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- 1996
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ZnGeP2 crystallized from the melt via horizontal gradient freezing shows the tendency to decompose into Ge and GeP when the equilibrium vapor pressure is not exactly controlled during the entire crystallization process. Using differential thermal analysis (DTA) it was found that ZnGeP2 has a truly congruent melting point of 1311 K. Adding small amounts of the elements and binaries in the ternary system Zn-Ge-P to stoichiometric ZnGeP2 a significant deflection of the liquidus curve was observed at the melting point of ZnGeP2- From DTA, X-ray diffractometry (XRD), photoluminescence (PL), transmission and conductivity measurements it was concluded that the melt grown material was highly compensated. The presence of a broad acceptor and donor band in the band gap could be associated with phosphorous and zinc point defects in the crystal lattice. It is assumed that the defect concentrations are of the order 1019 cm−3.
Composition of the Equilibrium Vapor Phase Over ZnGeP2 and Thermal Stability
- S. Rechter, A. Kurzweil, R. H. Castleberry, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 450 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 321
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- 1996
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ZnGeP2 can be transported by chemical vapor transport (CVT) using phosphorus or ZnP2 as transporting agent. Since germanium has a seven order of magnitude smaller partial pressure than zinc and phosphorus solely the formation of a volatile GePy (y≥l) species can explain the CVT-growth which was observed in a temperature range from 973 to 1573 K. To stabilize this species phosphorus pressures in the bar range are needed. Using absorption spectroscopy to analyze the equilibrium vapor phase composition over P, GeP and ZnGeP2, absorption lines were found adjacent to P2 band heads in the wavelength range from 180 to 260 nm which were addressed as band heads of an unknown GePy species. Quadrupole mass spectroscopy (QMS) measurements revealed that this species is not stable at lower pressures decomposing presynthesized GeP and ZnGeP2 in a Knudsen cell. In the temperature range from 550 to 800 K at total pressures of 10−7 to 10−6 mbar, ZnGeP2 decomposes into Zn and P4 whereas Zn is the dominant gas phase species. Under vacuum ZnGeP2 starts to decompose at 600 K while in a N2 atmosphere decomposition occurs at 923 K. By adding ZnP2 (5mg/cm3) to polycrystalline ZnGeP2, which was placed in an evacuated and closed quartz glass ampoule, red transparent crystals were yielded in a temperature gradient ΔT= 1073–1023 K.
Real-time Optical Monitoring of GaxIn1−xP/GaP Heterostructures on Silicon
- N. Dietz, U. Rossow, D. E. Aspnes, N. Sukidi, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 406 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 127
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- 1995
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In this paper we report the combined application of p-polarized reflectance spectroscopy (PRS), reflectance difference spectroscopy (RDS), and laser light scattering (LLS) to investigate the heteroepitaxy of GaxIn 1−xP/GaP on Si by pulsed chemical beam epitaxy (PCBE) with tertiarybutylphosphine (TBP), triethylgallium (TEG), and trimethylindium (TMI) precursors. Both, PRS and RDS follow the growth process with submonolayer resolution utilizing a periodic fine structure signal, which is caused by a periodic alteration of thickness and composition of an ultra-thin surface reaction layer during the periodic TEG and TBP exposure of the surface. After the transition from GaP growth to GaxIn 1−xP growth, the RDS oscillations are reoriented after about five precursor cycles in a new oscillation periodicity, where the response to the TBP pulse has the opposite direction. The ratio of the changes in the amplitudes of RDS signals as a response to TEG and TMI surface exposure is used to estimate the composition fo GaxIn 1−xP. The PRS fine structure is maintained after switching to GaxIn 1−xP growth with a separate feature for each TEG and TMI surface exposure. The amplitude ratio of these features changes during growth.
Surface and Defect Structure of Epitaxial Gallium Phosphide on Si(001)
- A. E. Miller, J. T. Kelliher, N. Dietz, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 355 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 197
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- 1994
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Epitaxial GaP films grown on silicon by chemical beam epitaxy contain planar defects that are related to three dimensional island formation of GaP nucleating on the silicon substrate. Attention in the surface preconditioning and to the surface chemistry during the initial stages of nucleation and growth allow the control from pronounced three-dimensional growth behavior toward almost two-dimensional growth. New results on defect structure and surface morphology obtained by a combination of atomic force microscope (AFM) and a new method p-polarized reflectance spectroscopy (PRS) are presented and related to growth conditions during the initial stages of heteroepitaxy.
Formation of Sic Films on Silicon Field Emitters
- Jiang Liu, U. T. Son, A. N. Stepanova, K. N. Christensen, G. W. Wojak, E. I. Givargizov, K. J. Bachmann, John J. Hren
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- Journal:
- MRS Online Proceedings Library Archive / Volume 311 / 1993
- Published online by Cambridge University Press:
- 21 February 2011, 21
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- 1993
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Thin films of silicon carbide have been formed on silicon field emitters by chemical reaction with ethylene (C2H4) at temperatures of 850 to 950°C using ethylene gas pressures up to 5×10-3 Torr. By controlling the reaction time and temperature, we have made SiC coatings of from ∼20 A thickness to complete transformation of tips to SiC (1-2 μm). The electron diffraction pattern of the SiC layers show the expected 20% lattice mismatch with silicon and, for those emitters completely transformed, a polycrystalline 3C-SiC polytype was identified. The small radius of curvature was maintained for both the coated and completely transformed tips, although some defects and surface roughness was introduced during the treatments.
Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures
- N. Dietz, S. Habermehl, J. T. Kelliher, G. Lucovsky, K. J. Bachmann
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- Journal:
- MRS Online Proceedings Library Archive / Volume 334 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 495
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- 1993
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The low temperature epitaxial growth of Si / GaP / Si heterostructures is investigated with the aim using GaP as a dielectric isolation layer for Si circuits. GaP layers have been deposited on Si(100) surfaces by chemical beam epitaxy (CBE) using tertiarybutyl phosphine (TBP) and triethylgallium (TEG) as source materials. The influence of the cleaning and passivation of the GaP surface has been studied in-situ by AES and LEED, with high quality epitaxial growth proceeding on vicinal GaP(100) substrates. Si / GaP / Si heterostructures have been investigated by cross sectional high resolution transmission electron microscope (HRTEM) and secondary ion mass spectroscope (SIMS). These methods reveal the formation of an amorphous SiC interlayer between the Si substrate and GaP film due to diffusion of carbon generated in the decomposition of the metalorganic precursors at the surface to the GaP/Si interface upon prolonged growth (layer thickness > 300Å). The formation of twins parallel to {111} variants in the GaP epilayer are extended into the subsequently grown Si film with minor generation of new twins.
Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates
- Y. H. Lee, G.-H. Ma, K. J. Bachmann, J. T. Glass
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- Journal:
- MRS Online Proceedings Library Archive / Volume 162 / 1989
- Published online by Cambridge University Press:
- 26 February 2011, 119
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- 1989
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The growth of diamond films on Si(001), polycrystalline Ni, Mo, Ta, and W substrates by biased controlled chemical vapor deposition is discussed. Biasing effects were examined using the Si(001) substrates. The film quality as judged by Raman spectroscopy and scanning electron microscopy depended strongly on the biasing conditions. Under low current reverse bias conditions, highly faceted cubooctahedral polycrystalline diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained. Transmission electron microscopy indicated that these films contained relatively low defect densities and no significant interfacial layers. Biasing into high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2 bonded carbon into the diamond film. Such films were found to contain very high defect densities and a relatively thick interfacial layer. An investigation of the effects of substrate material was also conducted. Films grown on Si, Ni and W exhibited the best quality. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed.
ZnGeP2: A Wide Bandgap Chalcopyrite Structure Semiconductor for Nonlinear Optical Applications
- G. C. Xing, K. J. Bachmann, J. B. Posthill, M. L. Timmons
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- MRS Online Proceedings Library Archive / Volume 162 / 1989
- Published online by Cambridge University Press:
- 26 February 2011, 615
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- 1989
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In this paper we report the growth and characterization of wide bandgap chalcopyrite structure semiconductor ZnGeP2 epitaxial layers by open tube MOCVD and ZnGeP2 single crystals by high-pressure vapor transport (HPVT). The electrical and optical properties of these crystals have been investigated by Hall measurements, absorption spectroscopy, photoconductivity and photoluminescence spectroscopy. The onset of the absorption edge for HPVT ZnGeP2 at 1.99 eV is in accord with the pseudodirect bandgap of this material. Both the meltgrown crystals and epitaxial layers show extended band tailing in the transparency range of ZnGeP2 depending on the growth conditions. Recently we have shown that epitaxial ZnGeP2 films can be grown with excellent surface morphology by MOCVD on (111) GaP substrates. These films should be suitable for phase matched second harmonic generation utilizing CO laser radiation in thick film heterostructures.
Issues in the Growth of Bulk Crystals of Infrared Materials
- K. J. Bachmann, H. Goslowsky
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- Journal:
- MRS Online Proceedings Library Archive / Volume 90 / 1986
- Published online by Cambridge University Press:
- 25 February 2011, 69
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- 1986
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Selected issues in the growth of bulk single crystals for applications in infrared optoelectronics are reviewed including an overview over materials choices, bulk III-V crystal growth, and the growth of II-VI, IV-VI and I-III-VI2 compounds and alloys. The most important issues are the control of purity, perfection, stoichiometry, and uniformity during crystal growth and the control of the surface properties in wafer fabrication. Specific examples are given to illustrate problems related to these issues and to discuss approaches to their solution.